1 silicon n channel junction fet 2SK30ATM low noise pre-amplifier, tone control amplifier and dc-ac high input impedanc e amplifier circuit applications ? high breakdown voltage: v gds = ? 50 v ? high input impedance: i gss = ? 1 na (max) (v gs = ? 30 v) ? low noise: nf = 0.5db (typ.) (v ds = 15 v, v gs = 0, r g = 100 k ? , f = 120 hz) absolute maximum ratings (ta = 25c) characteristics symbol rating unit gate-drain voltage v gds ?50 v gate current i g 10 ma drain power dissipation p d 100 mw junction temperature t j 125 c storage temperature range t stg ?55~125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate cut-off current i gss v gs = ?30 v, v ds = 0 ? ? ? 1.0 na gate-drain breakdown voltage v (br) gds v ds = 0, i g = ? 100 a ?50 ? ? v drain current i dss (note) v ds = 10 v, v gs = 0 0.3 ? 6.5 ma gate-source cut-off voltage v gs (off) v ds = 10 v, i d = 0.1 a ?0.4 ? ? 5.0 v forward transfer admittance ? y fs ? v ds = 10 v, v gs = 0, f = 1 khz 1.2 ? ? ms input capacitance c iss v gs = 0, v ds = 0, f = 1 mhz ? 8.2 ? pf reverse transfer capacitance c rss v gd = ?10 v, v ds = 0, f = 1 mhz ? 2.6 ? pf noise figure nf v ds = 15 v, v gs = 0 r g = 100 k , f = 120 hz ? 0.5 5.0 db note: i dss classification r: 0.30~0.75, o: 0.60~1.40, y: 1.20~ 3.00, gr: 2.60~6.50 unit: mm tiger electronic co.,ltd
2 tiger electronic co.,ltd
3 tiger electronic co.,ltd
|
